| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4f51818f4238424fa5e29f12c21502ca |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2014-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_406359d2c2dfbc4ff4bb54d8427bb502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ce0133894498d85236d4956ad8d9d71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb6a7987476b6ad9fb884dd2b751d25b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8acac6beeee7f3643c8237244777905
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45d8a83615c2071625e35e4e38401d9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c74e0bfcf1197bbd64317d302832a75b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a67ec3d69c0b9ed1afa0427016524c2b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c75f600bc25993cc425b5b29f2993eb3 |
| publicationDate |
2018-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I638803-B |
| titleOfInvention |
Method for preparing alkyl indium compound and use thereof |
| abstract |
The present invention relates to a process for producing dialkylindium chloride in high yield and in high selectivity and purity at low cost and environmentally responsible. The dialkyl indium chloride prepared according to the present invention is also particularly suitable for preparing an indium containing precursor in high yield and selectivity and in high purity, as required, because of its high purity and yield. The indium-containing precursors obtainable are particularly suitable for metal-organic chemical vapor deposition (MOCVD) or metal-organic vapor phase epitaxy (MOVPE) because of their high purity. The novel method according to the present invention draws attention due to an improved process solution, especially a fast process operation. The process is also suitable for industrial scale by the controllability and considerable use of inexpensive starting materials that cause lower levels of damage to the environment. |
| priorityDate |
2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |