http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I637072-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-564 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B9-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2016-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_445c7c2bc82ab9456d93275a59dd9b86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20df68b603f1795f0abcf6456ff51c8b |
| publicationDate | 2018-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I637072-B |
| titleOfInvention | Cleaning method of SiC single crystal growth furnace |
| abstract | The cleaning method of the SiC single crystal growth furnace of the present invention is a method of using a gas to clean a SiC single crystal growth furnace provided with a substrate in a chamber. The substrate in the chamber has at least the surface of (111) in powder XRD analysis. The 3C-SiC polycrystal whose surface has a strength ratio of 85% to 100% relative to other crystal surfaces. The cleaning method is to make a mixed gas of at least one of fluorine gas, inert gas and air in a non-plasma state. Those who circulate through the SiC single crystal growth furnace and selectively remove the SiC deposits deposited in the SiC single crystal growth furnace, the mixed gas system consists of 1% by volume to 20% by volume of fluorine gas and 80% by volume The temperature in the SiC single crystal growth furnace is 200 ° C to 500 ° C. |
| priorityDate | 2015-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.