| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-134309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133345 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4d9be286624dc55ccecf0a4f6e26e04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fa2f1cf002f782d6fbf62e9b457795a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5563e68c7c10017c83fb15b655a22d87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e719ac35e184b31cab0b0e2df294550
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b8358fc7712ffc46eff7cf4727ea683 |
| publicationDate |
2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I635615-B |
| titleOfInvention |
Sequential circuit, semiconductor device |
| abstract |
An object of the present invention is to provide a semiconductor device which is highly reliable and can realize a narrow frame. The driving circuit includes: a first transistor having a first gate and a second gate electrically connected via a semiconductor film; and one of a source and a drain and one of a source and a drain of the first transistor a second transistor electrically connected, the pixel portion comprising: a third transistor; a liquid crystal element; and a capacitive element, the liquid crystal element comprising: a light transmissive connection electrically connected to one of a source and a drain of the third transistor a first conductive film; a second conductive film; and a liquid crystal layer to which an electric field generated between the first conductive film and the second conductive film is applied, the capacitive element comprising: a first conductive film; and a third conductive film having light transmissivity And a nitride insulating film between the first conductive film and the third conductive film, and the nitride insulating film is located between the semiconductor film of the first transistor and the second gate. |
| priorityDate |
2013-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |