| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0705
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2014-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa07e0c99c24a951a9ae29a1ca0eb12f |
| publicationDate |
2018-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I633650-B |
| titleOfInvention |
Semiconductor device |
| abstract |
An object of the present invention is to provide a semiconductor device excellent in charge retention characteristics. As a transistor for connecting the gate to the node for holding electric charge, a transistor including a thick gate insulating film to reduce leakage current is separately provided. The charge corresponding to the material is held in the node by using the separately provided transistor and a transistor in which the oxide semiconductor is used for the semiconductor layer including the semiconductor layer of the channel formation region. |
| priorityDate |
2013-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |