http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I632422-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32 |
| filingDate | 2016-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_295354131aa78d80859f4b9107141ade http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e34c21a8861c45dbe7c96760158af6a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d104fd2245bdf5654068f4517465a2f7 |
| publicationDate | 2018-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I632422-B |
| titleOfInvention | Photomask base, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| abstract | The invention provides a photomask substrate for manufacturing a phase shift photomask capable of forming a high-precision and fine pattern on a light-shielding film. The invention relates to a photomask substrate, which is characterized in that: a phase shift film including a material containing silicon, a light shielding film including a material containing chromium, oxygen, and carbon are sequentially arranged on a light-transmitting substrate, and includes: A hard mask film containing a material selected from one or more elements of silicon and tantalum. The light-shielding film is a single-layer film with an inclined portion that increases the oxygen content on the surface on the side of the hard mask film and in the vicinity thereof. The maximum peak value of the narrow spectrum of N1s obtained by X-ray photoelectron spectroscopy of the film is below the detection lower limit, the chromium content of the portion of the light-shielding film other than the composition inclined portion is 50 atomic% or more, and the X-ray photoelectron spectroscopy is used. The narrow spectrum of Cr2p obtained by method analysis has the maximum peak of the bond energy below 574 eV. |
| priorityDate | 2015-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.