http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I631711-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2014-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86278739d78f82e4e8019458d88aea98 |
| publicationDate | 2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I631711-B |
| titleOfInvention | Semiconductor device |
| abstract | An object of the present invention is to provide a semiconductor device using an oxide semiconductor with good electrical characteristics. An object of the present invention is to provide a highly reliable semiconductor device in which variations in electrical characteristics of a semiconductor device using an oxide semiconductor are suppressed. The semiconductor device includes: an island-shaped semiconductor layer on a base insulating layer; a pair of electrodes on the semiconductor layer; a barrier layer in contact with the bottom surface of the electrode; a gate electrode on the semiconductor layer; and between the semiconductor layer and the gate electrode Gate insulation. In addition, the semiconductor layer includes an oxide semiconductor, the base insulating layer includes silicon oxide or silicon oxynitride, the electrode includes Al, Cr, Cu, Ta, Ti, Mo, or W, and the barrier layer includes an oxide, and the oxide includes an oxide semiconductor One or more of the contained metal elements. In addition, when viewed in a plan view, the electrode and the barrier layer extend to the outside of the semiconductor layer. |
| priorityDate | 2013-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 105.