| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate |
2014-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_366121023f1cd08878ec341f91c26027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abbaf035a8c74d18b77519eea16e5e71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cb50abd0ce070a2b965aa090f31ede4 |
| publicationDate |
2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I631231-B |
| titleOfInvention |
PECVD microcrystalline germanium (SIGE) |
| abstract |
Embodiments of the invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is also formed directly on the PECVD seed layer using PECVD. The processing temperature for both the seed SiGe layer and the bulk SiGe layer is less than 450 degrees Celsius. |
| priorityDate |
2013-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |