http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I628703-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2dd9870c890413b57d9ac979e0b73322 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ecfa78a2b6af52b05520a8ea0e834bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a96124e311840956822ff9d74a1ca2bf |
| publicationDate | 2018-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I628703-B |
| titleOfInvention | Ring gate III-V family quantum well transistor and tantalum junctionless crystal and manufacturing method thereof |
| abstract | The invention provides a ring-gate III-V group quantum well transistor and a germanium non-contact surface transistor and a manufacturing method thereof. The element includes a III-V group quantum well transistor and a germanium non-contact interface transistor; the III- The group V quantum well transistor includes: a first Ge band structure, an N - type InGaAs layer, and an N + type InGaAs layer. The N + type InGaAs layer is formed with a first annular trench, a semiconductor barrier layer, and a first high K dielectric layer and a first metal gate; the germanium-free junction transistor comprising: a second belt structure Ge, P + type Ge layer, said P + type Ge layer is formed in a second annular groove, the first Two high-K dielectric layers and a second metal gate. |
| priorityDate | 2016-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.