| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_11d738aa9b5b691f2f5094e7b819ac93 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45559
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-36 |
| filingDate |
2016-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0a95961468bab481d82c5aae94faa6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e25159862d33b96409a9f57a6fb2306f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9483d8500e1b2e28312965d6fd8a1eff |
| publicationDate |
2018-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I626329-B |
| titleOfInvention |
Composition and method for depositing tantalum nitride film |
| abstract |
Described herein are a composition, a silicon nitride film, and a method for forming a silicon nitride film using at least one cyclodisilazane precursor. In one aspect, a method for forming a silicon nitride film is provided, which includes the following steps: providing a substrate in a reactor; at least one ring containing a hydrocarbon leaving group and two Si-H groups Silazane is introduced into the reactor, wherein the at least one ring disilazane reacts on at least a portion of the surface of the substrate to provide a chemisorption layer; the reactor is washed with a purge gas; and a plasma containing nitrogen and an inert gas The reactor is introduced to react with at least a portion of the chemisorption layer and provide at least one reactive site, wherein the plasma is generated at a power density between about 0.01 to about 1.5 W / cm 2 . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I747440-B |
| priorityDate |
2015-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |