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filingDate 2014-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b24de4983540b847faa4efc678f8c4d
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publicationDate 2018-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I624429-B
titleOfInvention Tantalum nitride powder for release agent for mold for casting of polycrystalline ingot, method for producing the same, slurry containing the tantalum nitride powder, mold for casting polycrystalline ingot, method for producing the same, and method for producing polycrystalline ingot using the same
abstract The present invention provides a tantalum nitride powder for a release agent for a polycrystalline ingot casting mold which can modulate a polycrystalline germanium ingot having a high photoelectric conversion efficiency at a low cost. The specific surface area of the tantalum nitride powder for the release agent for the mold for casting a polycrystalline ingot is 5 to 40 m 2 /g, and the oxygen content ratio in the surface layer of the particles is FSO (% by mass) and is contained in the interior of the particles. When the oxygen ratio is FIO (% by mass) and the specific surface area is FS (m 2 /g), FS/FSO is 8 to 30, FS/FIO is 22 or more, and in the particle size distribution measurement, 10% by volume diameter D10 and 90 volume The ratio of the diameter D90 to the D10/D90 is 0.05 to 0.20. The present invention provides a tantalum nitride powder for a release agent for a mold for casting a polycrystalline ingot, a method for producing the same, a slurry containing the tantalum nitride powder, a mold for casting a polycrystalline ingot, a method for producing the same, and a polycrystalline silicon using the mold The manufacturing method of the ingot.
priorityDate 2013-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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