http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I622174-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13069 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate | 2014-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6539728aad4a708a8bf00790526094dc |
| publicationDate | 2018-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I622174-B |
| titleOfInvention | Semiconductor device |
| abstract | An embodiment of the present invention provides a semiconductor device including an oxide semiconductor that achieves miniaturization while maintaining good electrical characteristics. One embodiment In this semiconductor device, an insulating layer containing an aluminum oxide film containing excess oxygen is provided so as to surround the oxide semiconductor layer. The excess oxygen contained in the aluminum oxide film is supplied to the oxide semiconductor layer in which the channel is formed by heat treatment in the manufacturing process of the semiconductor device. Moreover, since the aluminum oxide film has barrier properties against oxygen and hydrogen, it is possible to suppress oxygen from escaping from the oxide semiconductor layer surrounded by the insulating layer containing the aluminum oxide film and impurities such as hydrogen from being mixed into the oxide semiconductor layer, and to make the oxide The high purity of the semiconductor layer is essential. In addition, the threshold voltage is well controlled by the gate electrode layers provided above and below the oxide semiconductor layer. |
| priorityDate | 2013-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 73.