http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I622081-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32577 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caa47ce25befc30486eb8b15b6c62373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec92357db5a2b75d9cd385c2361f4819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f8d0bf8fd842c6fee698a0c1ede3353 |
| publicationDate | 2018-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I622081-B |
| titleOfInvention | Plasma processing device and plasma processing method |
| abstract | An object of the present invention is to provide a plasma processing apparatus and a plasma processing method which can increase the yield.nn n n The solution of the present invention is a plasma processing apparatus and a processing method for treating a wafer to be processed placed on a sample surface of a processing chamber disposed inside a vacuum chamber using plasma generated in the processing chamber. In the above process, the first high-frequency power supplied to the first electrode disposed inside the sample stage and the dielectric disposed on the outer peripheral side of the surface on which the wafer is placed on the sample stage are placed The second electrode on the inner side of the quality annular member interposes the second high-frequency power supplied from the resonance circuit, and adjusts and processes the wafer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I749576-B |
| priorityDate | 2015-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.