http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I620324-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate | 2014-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_086f96f1eb3c99c60d348831462cf55d |
| publicationDate | 2018-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I620324-B |
| titleOfInvention | Semiconductor device |
| abstract | An object of one embodiment of the present invention is to provide a semiconductor device capable of suppressing a reduction in electrical characteristics that is gradually noticeable with miniaturization. The semiconductor device includes: a first oxide semiconductor layer on an insulating surface; and a second oxide semiconductor layer on the first oxide semiconductor layer, the area of the second oxide semiconductor layer being smaller than the first oxide semiconductor layer, The whole is overlapped with the first oxide semiconductor layer; the source electrode layer and the drain electrode layer whose one surface is in contact with a part of the first oxide semiconductor layer and a part of the second oxide semiconductor layer; the first oxide semiconductor layer And a third oxide semiconductor layer in which a portion of the second oxide semiconductor layer is in contact with the other surface of the source electrode layer and the drain electrode layer; a gate insulating film on the third oxide semiconductor layer; and a gate electrode A gate electrode layer on an insulating film. |
| priorityDate | 2013-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.