| abstract |
The present invention describes a high dielectric constant (k 40), low leakage current (leakage current at an equivalent oxide thickness of 0.6 nm or less) An amorphous metal oxide of 10 -6 A/cm 2 ), the amorphous metal oxide comprising an oxide formed of two or more compatible metals selected from the group consisting of: They are: lanthanum, cerium, lanthanum, cerium, lanthanum, calcium, magnesium, titanium, zirconium, lanthanum, tin and lanthanide metals. The metal oxide of this type formed can vary the relative proportions of the metal components with the thickness of the oxides, thereby enhancing the stability of the oxides. The metal oxide can be easily fabricated into the metal oxide by the atomic layer deposition process disclosed in the present invention to provide a metal oxide dielectric material which is often employed in DRAMs and other microelectronic components. |