| abstract |
Embodiments of the present invention are prepared to dissipate heat from a semiconductor-on-insulator (SOI) structure. In one embodiment, a method for manufacturing an integrated circuit is disclosed. In a first step, an active circuit is formed in an active layer of an SOI wafer. In a second step, the substrate material is removed from a substrate layer disposed on a backside of one of the SOI wafers. In a third step, the insulator material is removed from the back side of the SOI wafer to form a hollowed-out insulator region. In a fourth step, a heat dissipation layer is deposited on the hollowed-out insulator region. The heat dissipation layer is thermally conductive and electrically insulating. |