| abstract |
A fin field effect transistor includes a substrate, a plurality of insulators disposed on the substrate, a gate stack structure, and strained material. The substrate includes at least one semiconductor fin, and the semiconductor fin includes at least one modulation portion distributed therein. The semiconductor fins are sandwiched between the insulators. The gate stack structure is disposed over a portion of the semiconductor fin and over a portion of the insulator. The strained material covers a portion of the semiconductor fins that are exposed by the gate stack structure. In addition, a method of manufacturing a fin field effect transistor has also been proposed. |