| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2015-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5a583b63591e1fd7f54e87da4a8aedc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_988abd9b717df4b272ef6d3dae284e57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e09f937e3e0db8921d39c2aee21f255e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83d4ca072a20fd9dd5c679182919bb20 |
| publicationDate |
2018-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I615897-B |
| titleOfInvention |
Method of etching an organic film |
| abstract |
Suppress damage to the base layer and etch the organic film.nn n n The method according to one embodiment includes a step of etching the organic film in a processing container of a plasma processing apparatus that stores the object to be processed. In this step, a processing gas containing hydrogen and nitrogen is supplied into the processing container to generate a plasma of the processing gas. The flow ratio of hydrogen to the processing gas flow is set to a ratio of 35% or more and 75% or less. The high-frequency bias power for attracting ions to the object is set to a power in a range of 50 W or more and 135 W or less. |
| priorityDate |
2014-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |