| abstract |
The present invention relates to a semiconductor device and a method for manufacturing the same, which provide stable electrical characteristics to a transistor using an oxide semiconductor film. In addition, a transistor using an oxide semiconductor film has excellent electrical characteristics. The present invention also provides a highly reliable semiconductor device having the transistor. As for a transistor having a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film, the multilayer film is provided so as to overlap the gate electrode through the gate insulating film. The shape of the first angle formed by the lower surface of the oxide semiconductor film and the side surface of the oxide semiconductor film, and the second angle formed by the lower surface of the oxide film and the side surface of the oxide film, and the first angle It is smaller than the second angle and is set to an acute angle. In addition, a semiconductor device is manufactured by using the transistor. |