http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I613761-B

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filingDate 2016-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adba6ed96653312f2b435b01687ca990
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publicationDate 2018-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I613761-B
titleOfInvention Three-dimensional non-volatile memory and manufacturing method thereof
abstract A three-dimensional non-volatile memory comprising a substrate, a stacked structure and a channel layer. The stack structure is disposed on the substrate and includes a plurality of first dielectric layers, a plurality of gates, and a plurality of charge storage structures. The first dielectric layer and the gate are alternately stacked. The charge storage structure is disposed on one side of the gate. Adjacent two charge storage structures are isolated by a first dielectric layer located therebetween. Each of the charge storage structures includes a first oxide layer, a nitride layer, and a second oxide layer sequentially disposed on one side of each gate. The channel layer is disposed on a sidewall of the stacked structure adjacent to the charge storage structure.
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