| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2013-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84bea3eac9d4edf38b0c7f85c99aee71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7afe501edae5cb19ed01f02a761b6186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b4cbe1dafba325891078e2bbf98b744
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84b3fde0e1eab19f30b0ece8488038e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74118a6314db5da32dc461dd44435cd2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_607919b5ac3a79024e733fcc7f0f2ddc |
| publicationDate |
2018-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I613728-B |
| titleOfInvention |
Method and apparatus for treating substrate using ion shield |
| abstract |
Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer can include the steps of: providing a substrate on a substrate support, the substrate support being disposed in a processing chamber In the space and under an ion shield, the ion shield has a bias power applied to the ion shield, the ion shield comprising a substantially planar member and a plurality of perforations, the substantially planar member being supported Parallel to the substrate support, the plurality of perforations being formed through the planar member, wherein a ratio of diameters of the perforations to the thickness of the planar member is in a range from about 10:1 to about 1:10; a process gas flows into an upper processing space above the ion shield; a plasma is formed from the process gas in the upper processing space; the first layer is treated by neutral radicals of the ion shield; And heating the substrate to a temperature of up to about 550 ° C while processing the first layer. |
| priorityDate |
2012-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |