| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04M1-0266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R1-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2010-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01586b738d5c3da823a8b306e0b71efa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5a79f4c83d6887d5708274a362a3a58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae7f3304cfdb2f1624d6568ef58c7401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa08dd1ce9b0d4cda7b7aef3d0448f94 |
| publicationDate |
2018-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I612677-B |
| titleOfInvention |
Analog circuit and semiconductor device |
| abstract |
An object of the present invention is to obtain a semiconductor device having high sensitivity and wide dynamic range of a detection signal, and using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit formed using a thin film transistor including an oxide semiconductor having the function of a channel formation layer, a hydrogen concentration of 5 × 10 19 atoms / cm 3 or less, and essentially being free of an electric field The state of the insulator. Therefore, a semiconductor device having high sensitivity and a wide dynamic range of a detection signal can be obtained. |
| priorityDate |
2009-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |