Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2014-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f6a77f858fe08ed0e1737a285ea4d41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f5dc7fc00622eb4be6d695571307594 |
publicationDate |
2018-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I612671-B |
titleOfInvention |
Semiconductor component and manufacturing method thereof |
abstract |
A semiconductor component includes a substrate, a gate structure, and a gate spacer. The substrate has a semiconductor fin that protrudes from a surface of the substrate. The gate structure is on the semiconductor fin. The gate spacer is located on the sidewall of the gate structure. Wherein, the gate spacer comprises a first material layer and a second material layer which are stacked on each other and are in direct contact with the gate structure respectively. |
priorityDate |
2014-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |