| abstract |
A photoresist underlayer composition having excellent thermal stability, etching resistance, gap filling property, and anti-void properties, and a method for forming a pattern using the same are disclosed. The photoresist lower layer composition includes: an aromatic ring-containing polymer having a repeating unit of the following formula 1; a compound of the following formula 4; and an organic solvent.nn n n n n n n n n n In Formula 1, R 1 is a monocyclic or polycyclic aromatic hydrocarbon group containing 5 to 20 carbon atoms, R 2 and R 3 are independently a monocyclic or polycyclic aromatic hydrocarbon group containing 4 to 14 carbon atoms, and a is An integer of 1 to 3, and b is an integer of 0 to 2.n n n n n n n n n n In Formula 4, n is an integer from 1 to 250. |