http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I611276-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a51be7116a241fb587bd009710d904e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa6d3c775b97999fb3cf0f69fdabc984 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_358eb94eb84d648f1ad23ad0ffc95ebf |
| publicationDate | 2018-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I611276-B |
| titleOfInvention | Photolithography stripping solution and pattern forming method |
| abstract | The invention provides a photolithographic stripping liquid which can effectively remove and remove photolithographic pattern residues and etching residues, and has excellent corrosion resistance to SiO 2 and various metal materials, and pattern formation using the same. method.n n n In the present invention, a predetermined basic compound is used as the counter amine of the hydrofluoric acid contained in the peeling solution for photolithography, and the pH value of the peeling solution for photolithography at 23 ° C is adjusted to 6.0 or less. Or above 8.5. |
| priorityDate | 2012-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 144.