| abstract |
The object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a group IV metal oxide film by applying a film-forming material dissolved in an organic solvent to the surface of a substrate and performing heat treatment or ultraviolet irradiation treatment, or both treatments As the film-forming material, a film-forming material obtained by reacting a vinylidene amide complex having a specific structure with an oxidizing agent such as oxygen, air, ozone, water, hydrogen peroxide, or the like is used. |