| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4933
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate |
2011-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19544268ddbf38b01090ef3c30f8c0ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e03de5a74c71c9b224bdb006c0ad9a4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9868ae0acee13463344640e417755f24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ff2ed30ed6cfd6858f991fa93d751ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c501ae3f99a86f919b34f85c91738b3b |
| publicationDate |
2016-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I552306-B |
| titleOfInvention |
The gate electrode of the integrated circuit field effect transistor and the gate contact plug layout |
| priorityDate |
2010-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |