| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2011-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d3fae0e218822061ac70ce8f2a13767
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c252376ef307ae63da6384c20c5645f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50273142e660607300702967f4a4b447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3990e397b2d86e86a506acd8d0567599
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc626caa215aed85d968f249eec347e5 |
| publicationDate |
2014-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I456654-B |
| titleOfInvention |
Semiconductor element structure with doped interlayer dielectric layer and method of forming same |
| priorityDate |
2011-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |