| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2009-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b113797e579d51bf52ed2d1d7d6f7257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3ae700802cfc19488174d4a7eceb587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_713e35076d9d3201c7c4fbb06b40e8b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f67b0212f6fd1b4f0e5143f7afd92ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e0015c190ff6df23720c251fc7d53f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8eac91cf000401138701df6197c88ee8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59ea4a1c5f1919d7040fb409d9a8216e |
| publicationDate |
2013-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I420667-B |
| titleOfInvention |
Group III-V MOSFET field effect transistor (MOSFET) with metal diffusion region |
| priorityDate |
2008-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |