http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I416736-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2010-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb15fb8b9f8218b6f11fc61bc812c269 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17f2af716c8865687175ebe35267acac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_857c7dfd46685c92dfe98aacddb1f576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c9475d7608fae5a576585bd6b740142 |
| publicationDate | 2013-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I416736-B |
| titleOfInvention | Thin film transistor and method of manufacturing same |
| abstract | The invention discloses a thin film transistor and the manufacture method thereof. A grid, a grid insulating layer, an oxide semi-conducting material layer, a conductive layer and a patterned photoresistive layer are sequentially formed on a substrate, wherein the patterned photoresistive layer comprises two first portions and a second portion connected between the first portions which are thicker than the second portion. When the patterned photoresistive layer is used to serve as a mask layer, the oxide semi-conducting material layer and the conductive layer not covered by the patterned photoresistive layer are removed to form an oxide semiconductor channel layer and a patterned conductive layer between the oxide semiconductor channel layer and the patterned photoresistive layer. The patterned photoresistive layer is partially removed to make the first portions thinner until the second portion is totally removed. When the first portions not yet removed are used to serve as a mask layer, the patterned conductive layer uncovered by the first portions is removed to form a source electrode and a drain electrode on the oxide semiconductor channel layer. |
| priorityDate | 2010-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.