| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2009-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f53894397847d4e3d65836645291ec71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4ddf6d410841950431146dc76f1408a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db815d1fed3532363af83a88a63b5726
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be6d9e8161a300c6684a374a6a9b5e5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22f0b6348386c8a19dfa538fa62b0e24 |
| publicationDate |
2013-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I416603-B |
| titleOfInvention |
Semiconductor device and method of manufacturing same |
| abstract |
The present disclosure describes a semiconductor device. The device includes a semiconductor substrate, an isolation structure formed in the substrate for isolating a first active region and a second active region, a first transistor formed in the first active region, the first transistor having a high-k gate dielectric layer and a metal gate with a first work function formed over the high-k gate dielectric layer, and a second transistor formed in the second active region, the second transistor having the high-k gate dielectric layer and a metal gate with a second work function formed over the high-k gate dielectric layer. The metal gates are formed from at least a single metal layer having the first work function and the second work function. |
| priorityDate |
2008-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |