http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I415216-B

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filingDate 2006-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fba8c852bfe0389ac73ab09745049e5e
publicationDate 2013-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I415216-B
titleOfInvention Semiconductor interconnect having adjacent storage slots for bonding and method of fabricating the same
abstract A semiconductor device and method has interconnects with adjoining reservoir openings. A dielectric layer is formed as part of an uppermost of the one or more interconnect layers. Openings formed in the dielectric layer result in modified portions of the dielectric layer along portions of sidewalls of the openings. The openings are filled with a conductive material, such as metal. An exposed portion of the dielectric layer is removed to form protruding pads of the conductive material extending above the dielectric layer. Reservoir openings are formed adjacent the protruding pads by removing the modified portions of the dielectric layer. When the semiconductor device is bonded with another device, either a wafer or a die, laterally flowing metal collects in the reservoir openings and ensures that a reliable electrical connection is made between the semiconductor device and the other device.
priorityDate 2006-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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