http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I413678-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2007-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9cc9ccffa31b8a092f6edd7dcb7a989 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aa9f6541b2144aa0de3d838abcc413e |
| publicationDate | 2013-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I413678-B |
| titleOfInvention | Slurry |
| abstract | <P>PROBLEM TO BE SOLVED: To provide a polishing solution containing solid abrasive grains to be used in barrier CMP for polishing a barrier layer made of a barrier metal material, which can obtain an excellent polishing speed for the barrier layer and can arbitrarily control the polishing speed of an insulating film. <P>SOLUTION: The polishing solution for polishing a barrier layer of a semiconductor integrated circuit contains a compound having colloidal silica having a surface indicating a positive ζ potential and a carboxylic group, a corrosion inhibitor and a surfactant, wherein pH is 2.5-5.0. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| priorityDate | 2007-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 142.