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filingDate 2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2013-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I413277-B
titleOfInvention Manufacturing technology of light emitting semiconductor components
abstract A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer.
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