http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I411022-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e2e91fe0e2b9cd6fbbdebe5a7d9045f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02049 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 2009-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I411022-B |
| titleOfInvention | Semiconductor wafer processing method and processing device |
| abstract | A processing method of a semiconductor wafer is provided. The method comprising the steps of: removing at least part of oxide film from a surface of the semiconductor wafer; removing liquid from the surface; and providing at least partial oxide film on the surface by applying an oxidizing gas wherein a gas flow of the oxidizing gas and/or an ambient gas involved by the oxidizing gas is characterized by an unsaturated vapor pressure of the liquid such that the liquid on the surface vaporizes. The above-described steps are conducted in this order. |
| priorityDate | 2008-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.