http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I409880-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2008-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b09cc900928844470b4cd9389a6ab7b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc6eb1706e541980e08a230d9f627f5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ff760b70ce07e7398a33efac6a4429e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dba84036b363aa393704c6d5c43032b5 |
| publicationDate | 2013-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I409880-B |
| titleOfInvention | Method for manufacturing a semiconductor device |
| abstract | A method for manufacturing a semiconductor device is disclosed. A semiconductor substrate such as bare silicon is provided, and a dielectric layer is formed over the semiconductor substrate. An opening is provided within the dielectric layer by removing a portion of the dielectric layer. A conformal first conductive layer is formed over the dielectric layer and the opening. A conformal second conductive layer is formed over the first conductive layer. A conformal barrier is formed over the second conductive layer. |
| priorityDate | 2008-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.