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filingDate 2009-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34a1b44bbadcde8964b69330ed82885d
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publicationDate 2013-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I406882-B
titleOfInvention Compound for filling a small gap in a semiconductor device, composition containing the same, and method for manufacturing the same
abstract A compound for filling small gaps in a semiconductor device, a composition for filling small gaps in a semiconductor device, and a method of fabricating a semiconductor capacitor, the compound including hydrolysates prepared by hydrolysis, in the presence of an acid catalyst, of compounds represented by Formulae 1, 2, and 3: [RO]3Si&mdash;[CH2]nR&prime;&emsp;&emsp;(1) wherein, in Formula 1, n is an integer from 0 to about 10, and R and R&prime; are each independently a hydrogen atom, a C1-C12 alkyl group, or a C6-C20 aryl group; HOOC[CH2]nR2Si&mdash;O&mdash;SiR&prime;2[CH2]nCOOH&emsp;&emsp;(2) wherein, in Formula 2, each n is independently an integer from 0 to about 10, and R and R&prime; are each independently a C1-C12 alkyl group or a C6-C20 aryl group; and R3Si&mdash;O&mdash;X&emsp;&emsp;(3) wherein, in Formula 3, X is R&prime; or SiR&prime;3, and R and R&prime; are each independently a C1-C12 alkyl group or a C6-C20 aryl group, or a polycondensate prepared by polycondensation of the hydrolysates represented by Formulae 1, 2, and 3.
priorityDate 2008-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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