http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I405267-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2007-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dec4d1ff9bbf4d655bc09a747cbae06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_484aa8851b89f61c62677d2f7eeda646 |
| publicationDate | 2013-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I405267-B |
| titleOfInvention | Method for manufacturing crystalline semiconductor film and semiconductor device |
| abstract | There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized. At that time, an energy period in a length direction in a laser beam spot of the laser beam is 0.5 mum to 10 mum, preferably, 1 mum to 5 mum; an energy distribution in a width direction in a laser beam spot of the laser beam is a Gaussian distribution; and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region. |
| priorityDate | 2006-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 155.