| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aafe0172ffd94d3486c518b0709bb2b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 |
| filingDate |
2009-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c912d61768745989a819c53b31626ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_355b3b43f4e94ed70f3abc63310fad55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86d584e204cac126edeee5c9928932a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18094595f968edb732fb7f30075622bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67f36d1833e3ea8f57f6b6ca27c20cc5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3796edb30e04e06cd6aca548bf9ed98 |
| publicationDate |
2013-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I403572-B |
| titleOfInvention |
The composition of the etched ruthenium dioxide layer, the method of etching the semiconductor element using the composition, and the composition of the etched semiconductor element |
| abstract |
A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater. |
| priorityDate |
2008-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |