http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I327771-B

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
filingDate 2006-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_184e173c5d53c29bfbc4ab34477196db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ddd96c5906f9b4c885fb719776201d9
publicationDate 2010-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I327771-B
titleOfInvention Process-variation tolerant diode, standard cells including the same, tags and sensors containing the same, and methods for manufacturing the same
abstract Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.
priorityDate 2005-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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