http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I309089-B

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2006-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2009-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6bd71c96e887cec5be6624655615f40
publicationDate 2009-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I309089-B
titleOfInvention Fabrication method of active device array substrate
abstract A fabrication method of active device array substrate is disclosed. First, a substrate and a multi-tone mask are provided. Then, a gate electrode, a gate insulation layer, a channel material layer, a metal material layer and a photo resist layer are formed on the substrate sequentially. Next, the photoresist layer is patterned by the multi-tone mask to form a patterned photoresist layer having three kinds of thicknesses. The metal material layer and the channel material layer not covered by the patterned photoresist layer are removed such that the channel layer is formed. Then, the patterned photoresist layer is removed by a fist removing process, a second removing process, and a third removing process sequentially to form a source electrode, a drain electrode and a passivation layer. Finally, a pixel electrode is formed on the substrate.
priorityDate 2006-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 19.