http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I291602-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2005-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f03fcd6a901b92f2bcbed4ee18a99b19 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23c43aa3fe55d690d955960d87a560cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9bd142784285954564fbd5330cba6d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_def1e66f171cfd7af0ff3e3817c4e5da http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84db4785b2d503209cad72f385842cc3 |
| publicationDate | 2007-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I291602-B |
| titleOfInvention | Photolithographic rinse solution and resist-pattern forming method |
| abstract | This invention provides a novel rinsing liquid for lithography, which, for a photoresist pattern, can reduce surface defects, the so-called defects, without sacrificing the quality of the product, and can impart resistance to electron beam irradiation to suppress the shrinkage of the resist pattern. A method for resist pattern formation using the same is also provided. A resist pattern is formed by preparing a rinsing liquid for lithography comprising an aqueous solution containing (A) a water-soluble and/or alkali-soluble polymer having a nitrogen atom in its molecular structure and (B) at least one member selected from aliphatic alcohols and alkyletherification products thereof. The present invention further forms a photoresist pattern using the rinsing liquid and then carrying out (1) the step of providing a photoresist film on a substrate, (2) the step of selectively exposing the photoresist film through a mask pattern, (3) the step of heat-treating the exposed photoresist film, (4) the step of carrying out alkali development, and (5) the step of treating the developed film with the rinsing liquid for lithography. |
| priorityDate | 2004-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 96.