| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0387
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66181 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02142
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2005-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8974304fc6392b9b9be48889f53e8a63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b275e6d3eec529231678cd98f26f90cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40fc644c26bda20bcd0dd1d12d325d11 |
| publicationDate |
2007-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I289893-B |
| titleOfInvention |
Method for producing a dielectric material on a semiconductor device and semiconductor device |
| abstract |
Method for producing a dielectric material on a semiconductor device and semiconductor device Method for producing a dielectric material on a semiconductor device with an atomic layer deposition procedure, whereby an aluminum oxide nitride or a silicon oxide nitrido or an aluminum silicon oxide nitride layer is deposited comprising a rare earth metal-element. The invention describes a semiconductor device with a dielectric layer comprising aluminum oxide nitride or silicon oxide nitride or an aluminum silicon oxide nitride comprising a rare earth metal element. |
| priorityDate |
2005-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |