http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I288955-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate | 2006-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a98876af6c745370e4ee10c8ef6baca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df8d4b9d8f1925ff689d409c808fb907 |
| publicationDate | 2007-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I288955-B |
| titleOfInvention | Method for fabricating a semiconductor device |
| abstract | A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process gas in a plasma, and exposing the gate stack to the excited dopant species to incorporate a dopant into the gate stack. The method can be utilized to tune the workfunction of the gate stack. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I503907-B |
| priorityDate | 2005-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.