| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2003-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_255655c146fa3c3ff2830a15dd44108e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_385c3b494374adc95d7735ed8acd8627 |
| publicationDate |
2007-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I287824-B |
| titleOfInvention |
MIM capacitor with metal nitride electrode materials and method of formation |
| abstract |
An MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower electrode over an optional capacitance layer of hemispherical grained polysilicon (HSG). Prior to the dielectric formation, the first layer may be optionally subjected to a nitridization or oxidation process. A dielectric layer of, for example, aluminum oxide (Al2O3) formed by atomic layer deposition (ALD) is fabricated over the first layer and after the optional nitridization or oxidation process. An upper electrode of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) is formed over the dielectric layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I741594-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11107809-B2 |
| priorityDate |
2002-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |