http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I287161-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1df0c0c4dd30b91733f9c5cd95d28996 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_93c8e83b8d51d5bceed5252562339610 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136236 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1362 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2004-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31a56d6a0239274d3d252f5bea91c8a6 |
| publicationDate | 2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I287161-B |
| titleOfInvention | Liquid crystal display device and manufacturing method thereof |
| abstract | When the channel length is shortened in a conventional manufacturing method with a reduced numbers of processes, the manufacturing margin is decreased, causing a lower yield. A four-mask process and a three-mask process proposal are constructed for a TN type liquid crystal display made by combining a novel technology for streamlining the signal wire formation process and pixel electrode formation process by adopting a half-tone exposure technology, a novel technology for streamlining the electrode terminal protective layer formation process by adopting a half-tone exposure technology in a publicly known source and drain wiring anodization process, and a novel technology for streamlining the scan line formation process and the semiconductor layer formation process, the scan line formation process and the etch stop layer formation process, and the scan line formation process and the contact formation process. |
| priorityDate | 2003-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.