http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I286992-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_66f87f74515fb51649580833e7cb38dd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G5-16 |
| filingDate | 2003-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e35265f5dd65fb162e643ab303bf7ff1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_902cd2afc315032cb9692ea63e3ad559 |
| publicationDate | 2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I286992-B |
| titleOfInvention | Highly tunable CMOS compatible micro capacitor |
| abstract | This invention presents a highly tunable micro capacitor by using CMOS processes and extra post-process techniques of MEMS. Not only PN diode capacitors or MOS varactors are not expected to offer wide tuning range and large quality factor, the tunable range of prior MEM varactors are also limited by pull-in effect. This invention presents a novel structure of tunable capacitor that can control the gap of the parallel plates of varactor down to very small value, such that the varactor has a broad tuning range. The said capacitor employs layers of vias and metal used for interconnection in CMOS IC to construct its main structure. Then usage of the post-process of MEMS can etch away the sacrifice layers to obtain the final varactor. The invented highly tunable capacitor can replace the existing varactors and can also be applied to many kinds of circuits, especially the radio frequency communications. |
| priorityDate | 2003-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.