| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47G9-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
2005-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65ba0101878eb463c307c810625359ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8af64b64cacd0c833f60c0f0046ac11 |
| publicationDate |
2007-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I285942-B |
| titleOfInvention |
Capacitor with nano-composite dielectric structure and method for fabricating the same |
| abstract |
A capacitor with a nano-composite dielectric structure and a method for fabricating the same are provided. The capacitor includes: a lower electrode; a nano-composite dielectric structure; and an upper electrode. The nano-composite dielectric structure is obtained by mixing an HfO2 layer and a dielectric layer having a dielectric constant equal to or greater than that of the HfO2 layer in the form of a nano-composition. The dielectric layer includes a material selected from a group consisting of ZrO2, La2O3 and Ta2O5, each having a dielectric constant in a range of approximately 25 to approximately 30 and a band gap energy level ranging from approximately 4.3 to approximately 7.8. |
| priorityDate |
2005-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |