http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I284931-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-10 |
| filingDate | 2002-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dff922af5654882376da7e0df7bd56a9 |
| publicationDate | 2007-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I284931-B |
| titleOfInvention | Method for making an indium-tin oxide film |
| abstract | A method for making an ITO film which has a high etching rate, low resistance and high light permeability. An indium tin oxide (ITO) film is formed under the normal temperature and a water added atmosphere. After the film is formed, the film is subject to a heat treatment at more than 180 DEG C, for more than 1 hr. The water added atmosphere is provided with a total water partial pressure within the film forming chamber at more than 8.2x10<-3> pascal, whereby the film property can be further improved by subsequent, post-forming annealing. By adjusting the total water partial pressure within the film forming chamber at more than 3.20x10<-3> pascal, an amorphous ITO film can be formed and a subsequent etching can be performed quickly. The subsequent, post-forming annealing is appropriately performed at over 180 DEG C (e.g. 220 DEG C) for over 1 hr (e.g. 1 to 3 hrs), whereby a crystalline ITO film with low resistance, and high permeability is obtained. |
| priorityDate | 2001-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.