http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I283071-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2005-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0342aa5ff5fbb42cf55ea9dd82a96acd |
| publicationDate | 2007-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I283071-B |
| titleOfInvention | Methods of manufacturing a thin film transistor and a display |
| abstract | Methods of manufacturing a thin film transistor and a display are provided. An amorphous island pattern is transferred into a polysilicon island pattern while the ion doped area is activated by the same laser annealing. Next, a passivation layer is formed on the polysilicon island pattern followed by etching the passivation layer to form opens exposing the ion doped area. Then, a metal layer is filled into the opens to form source/drain electrodes. Next, the polysilicon island pattern is treated by hydrogen plasma to reduce dangling bonds. |
| priorityDate | 2005-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.