| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95585944cd76ddfb6dc33ed2a0b84403 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C2603-74 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C43-253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D309-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C69-96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C69-736
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C69-712 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D309-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-736
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C43-253 |
| filingDate |
2003-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6095f31e8dedacdb71f6574b96c128a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_060ef2fb251f2b8724724b5a82972471 |
| publicationDate |
2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I282037-B |
| titleOfInvention |
Photoresist base material, method for purification thereof, and photoresist compositions |
| abstract |
This invention relates photoresist base materials consisting of extreme ultraviolet sensitive organic compounds represented by the general formula (1), [in which A is a central structure consisting of an aliphatic group having 1 to 50 carbon atoms, an aromatic group having 6 to 50 carbon atoms, an organic group bearing both, or an organic group having a cyclic structure formed by repetition of these groups; B to D are each an extreme ultraviolet sensitive group, a group exhibiting a reactivity on the action of a chromophore sensitive to extreme ultraviolet rays, a C1-50 aliphatic or C6-50 aromatic group having such a group, an organic group having both groups, or a substituent having a branched structure; X to Z are each a single bond or an ether linkage; l to n are integers of 0 to 5 satisfying the relationship: l+m+n >= 1; and A to D may each have a heteroatom-bearing substituent]. The invention provides photoresist base materials and photoresist compositions which enable ultrafine lithography with extreme ultraviolet rays or the like. |
| priorityDate |
2002-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |